Kim, DG Lee, HH Choi, WK Choi, YW Lee, S Woo, DH Byun, YT Kim, JH Kim, SH Nakano, Y 2024-01-21T09:33:49Z 2024-01-21T09:33:49Z 2021-09-01 2003-01-13 0003-6951 https://pubs.kist.re.kr/handle/201004/138910 We present a demonstration of a waveguide-type depleted optical thyristor laser diode with InGaAs/InGaAsP multiple-quantum-well structure. The measured switching voltage and current are 4.63 V and 10 muA, respectively. The holding voltage and current are, respectively, 0.59 V and 20 muA. The lasing threshold currents at 25 degreesC and 10 degreesC are 111 mA and 72.5 mA, respectively. The lasing wavelength is centered at 1.561 mum at a bias current equal to 1.41 times threshold. (C) 2003 American Institute of Physics. English AMER INST PHYSICS Lasing characteristics of InGaAs/InGaAsP multiple-quantum-well optical thyristor operating at 1.561 mu m Article 10.1063/1.1536711 1 APPLIED PHYSICS LETTERS, v.82, no.2, pp.158 - 160 APPLIED PHYSICS LETTERS 82 2 158 160 scie scopus 000180317400002 2-s2.0-0037434239 Physics, Applied Physics Article optical thyristor