Yoo, DC Lee, JY Kim, IS Kim, YT 2024-01-21T09:34:05Z 2024-01-21T09:34:05Z 2022-01-11 2003-01 0002-7820 https://pubs.kist.re.kr/handle/201004/138915 During a rapid thermal annealing process at 850degreesC in a N-2 ambient, an as-deposited amorphous YMnO3 thin film on Si (100) substrates was crystallized with two distinct layers. High-resolution transmission electron microscopy showed a top layer of c-axis-oriented Y-MnO3 and a bottom layer of polycrystalline YMnO3 in the 100-nm-thick YMnO3 thin film. The abrupt change of the crystalline orientation from the c-axis-preferred orientation to the random orientation is caused primarily by high stress induced by the c-axis-oriented YMnO3 layer. High-resolution X-ray diffraction showed that the c-axis-oriented YMnO3/polycrystalline YMnO3 structure effectively relieved the stress. English AMER CERAMIC SOC NONVOLATILE MEMORY DEVICES FERROELECTRIC PROPERTIES SI MICROSTRUCTURE CANDIDATE GROWTH Two-layer crystallization of amorphous YMnO3 thin films on Si(100) substrates Article 10.1111/j.1151-2916.2003.tb03292.x 1 JOURNAL OF THE AMERICAN CERAMIC SOCIETY, v.86, no.1, pp.149 - 151 JOURNAL OF THE AMERICAN CERAMIC SOCIETY 86 1 149 151 scie scopus 000180443100024 2-s2.0-0037234751 Materials Science, Ceramics Materials Science Article NONVOLATILE MEMORY DEVICES FERROELECTRIC PROPERTIES SI MICROSTRUCTURE CANDIDATE GROWTH