Lee, SH Lee, JK Yoon, KH 2024-01-21T09:35:56Z 2024-01-21T09:35:56Z 2021-09-01 2003-01 0734-2101 https://pubs.kist.re.kr/handle/201004/138949 Highly c-axis textured AlN films on Mo could be obtained using the structural modification of Mo thin films by the reactive rf magnetron sputtering at a low temperature. The correlation of structural properties of Mo and the degree of c-axis texturing in AlN films was studied as a function of sputtering pressure during the dc sputter deposition of Mo. The microstructure and residual stress of Mo films were found to be very dependent on the sputtering pressure. As the pressure decreases and the stress changes from tension to compression, the surface morphology and roughness of Mo films became gradually denser and smoother. It is found that the controlled smooth surface of Mo electrodes plays a key role in the growth of highly e-axis textured AlN films deposited onto them. A full width at half maximum of the x-ray rocking curve of the best AlN film on the surface-controlled Mo electrode was 2.30degrees. Film bulk acoustic wave resonators with an effective coupling coefficient of 5.6% could be achieved using the improved AlN films. (C) 2003 American Vacuum Society. English A V S AMER INST PHYSICS ALUMINUM NITRIDE THIN-FILMS Growth of highly c-axis textured AIN films on Mo electrodes for film bulk acoustic wave resonators Article 10.1116/1.1521961 1 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, v.21, no.1, pp.1 - 5 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A 21 1 1 5 scie scopus 000182598200001 2-s2.0-0037279010 Materials Science, Coatings & Films Physics, Applied Materials Science Physics Article ALUMINUM NITRIDE THIN-FILMS AlN