Lee, YJ Hwang, SM Choi, DJ Park, SH Kim, HD 2024-01-21T09:36:50Z 2024-01-21T09:36:50Z 2021-09-01 2002-12-02 0040-6090 https://pubs.kist.re.kr/handle/201004/138964 SiC films have been grown by a chemical vapor infiltration and deposition method. Different microstructures, so-called 'whisker-type' SiC films, have been fabricated, and the deposition and infiltration conditions of whisker growth have been studied. By connecting the SiC/C particles of the green body, fractural strength has been increased and, subsequently, the open pore structure of the body has been modified by an infiltrated whiskering process without a canning effect. Without using a metallic catalyst, silicon carbide whiskers have been obtained at an input gas ratio (H-2/MTS) above 20, and at temperatures below 1200 degreesC. The microstructure and composition of the whiskered SiC have been investigated by means of SEM and XPS. (C) 2002 Elsevier Science B.V. All rights reserved. English ELSEVIER SCIENCE SA SILICON-CARBIDE WHISKERS RICE HULLS DEPOSITION GROWTH The microstructural effect of chemically vapor infiltrated SiC whiskered thin film on the green body of SiC/C composites Article 10.1016/S0040-6090(02)00832-5 1 THIN SOLID FILMS, v.420, pp.354 - 359 THIN SOLID FILMS 420 354 359 scie scopus 000179922500060 2-s2.0-0037011083 Materials Science, Multidisciplinary Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter Materials Science Physics Article; Proceedings Paper SILICON-CARBIDE WHISKERS RICE HULLS DEPOSITION GROWTH silicon carbide whisker chemical vapor infiltration coating