Joo, OS Jung, KD Cho, SH Kyoung, JH Ahn, CK Choi, SC Dong, Y Yun, H Han, SH 2024-01-21T09:40:09Z 2024-01-21T09:40:09Z 2021-09-01 2002-12 0948-1907 https://pubs.kist.re.kr/handle/201004/139023 A new type of precursor, AlCl3:&apos;BuNH2 adduct, has been designed. The synthesis, preparation, and characterization of AlN thin films have been carried out. The AlCl3:&apos;BuNH2 adduct was a stable solid material with high vapor pressure (2.5 torr at 65degreesC) which was purified by sublimation. The structure of the precursor was fully identified by an X-ray single crystal analysis, elemental analysis, and nuclear magnetic resonance (NMR). The CVD process was performed using hydrogen under atmospheric pressure as the carrier gas. The film was characterized by Rutherford backscattering spectroscopy (RBS), Auger electron spectroscopy (AES), X-ray diffraction (XRD), and scanning electron microscopy (SEM). The quality of the film prepared from the precursor was excellent, with a preferential c-axis orientation, exceptionally low carbon contamination, and an ideal N/Al atomic ratio. English WILEY-V C H VERLAG GMBH CHEMICAL-VAPOR-DEPOSITION THERMAL-CONDUCTIVITY ALN GROWTH GAN ADDUCT MOVPE MOCVD of aluminum nitride thin films with a new type of single-source precursor: AlCl3 :(BuNH2)-Bu-t Article 10.1002/1521-3862(20021203)8:6<273::AID-CVDE273>3.0.CO;2-O 1 CHEMICAL VAPOR DEPOSITION, v.8, no.6, pp.273 - 276 CHEMICAL VAPOR DEPOSITION 8 6 273 276 scie scopus 000180009600009 2-s2.0-0040081671 Electrochemistry Materials Science, Coatings & Films Physics, Condensed Matter Electrochemistry Materials Science Physics Article CHEMICAL-VAPOR-DEPOSITION THERMAL-CONDUCTIVITY ALN GROWTH GAN ADDUCT MOVPE aluminum nitride MOCVD precursors