Son, SH Choi, BH Cho, KH Hwang, SW Park, YM Park, YJ Kim, EK Ahn, D 2024-01-21T09:40:35Z 2024-01-21T09:40:35Z 2021-09-01 2002-12 0374-4884 https://pubs.kist.re.kr/handle/201004/139031 We report the fabrication and the characterization of a single-electron transistor using a heavily doped n(+) GaAs thin layer. Simple wet etching was performed to obtain a quantum dot with a diameter of 50 nm, and the device showed clear Coulomb oscillations at temperatures much higher than 10 K. This dot size and high-temperature operation can hardly be obtained in other compound semiconductors based on single-electron transistors. Furthermore, the size of the fabricated dot was consistent with the T dependence. English KOREAN PHYSICAL SOC HETEROSTRUCTURES OSCILLATIONS TRANSPORT Single-electron tunneling through a heavily doped GaAs quantum dot Article 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.41, no.6, pp.953 - 955 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 41 6 953 955 scie scopus kci other 000179871300026 2-s2.0-0036946606 Physics, Multidisciplinary Physics Article HETEROSTRUCTURES OSCILLATIONS TRANSPORT singe elector tunneling quantum dot