Son, CS Cho, S Choi, IH Kim, SI Kim, YT Chung, SW 2024-01-21T09:40:48Z 2024-01-21T09:40:48Z 2021-09-01 2002-12 0374-4884 https://pubs.kist.re.kr/handle/201004/139035 In order to investigate the crystallographic orientation dependence of the electrical properties of carbon (C)-doped GaAs epilayers, we performed by high-index GaAs substrates. Epitaxial growths were carried out using atmospheric and low pressure metalorganic chemical vapor deposition (MOCVD) with C tetrabromide (CBr4) as the C source. The electrical properties of C-doped GaAs showed a strong crystallographic orientation dependence. The hole concentrations of the C-doped GaAs epilayers rapidly decreased with increasing offset angle and had a (311)A peak. The crystallographic orientation dependences of hole concentration and of the activation energy, when using both MOCVD systems, showed the same tendency, implying that C incorporation on a growing surface proceeded, through a similar surface reaction process in both MOCVD systems. English KOREAN PHYSICAL SOC VAPOR-PHASE-EPITAXY GAAS GROWTH DEPOSITION ALGAAS Crystallographic orientation dependence of carbon incorporation in atmospheric and low pressure MOCVD Article 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.41, no.6, pp.876 - 879 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 41 6 876 879 scie scopus kci other ART000864835 000179871300009 2-s2.0-0036946622 Physics, Multidisciplinary Physics Article VAPOR-PHASE-EPITAXY GAAS GROWTH DEPOSITION ALGAAS MOCVD GaAs