Song, JH Choi, DK Choi, WK 2024-01-21T09:45:11Z 2024-01-21T09:45:11Z 2021-09-01 2002-11 0168-583X https://pubs.kist.re.kr/handle/201004/139112 The dependence of surface smoothing and sputtering phenomena of Si ( 1 0 0) solid surfaces irradiated by CO(2) cluster ions on cluster-ion dosage was investigated using an atomic force microscope. The flux and total ion dosage of impinging cluster ions at the acceleration voltage of 50 kV were fixed at 10(0) ions/cm(2)s and were scanned from 5 x 10(10) to 5 x 10(13) ions/cm(2), respectively. The density of hillocks induced by cluster ion impact was gradually increased with the dosage up to 5 x 10(11) ions/cm(2), which caused that the irradiated surface became rough from 0,4 to 1.24 nm in root-mean-square roughness (sigma(rms)). At the boundary of the ion dosage of 10(12) ions/cm(2), the density of the induced hillocks was decreased and sigma(rms) was about 1.21 nm, not being deteriorated further. At the dosage of 5 x 10(13) ions/cm(2), the induced hillocks completely disappeared and the surface became very flat as much as sigma(rms) = 0.7 rim. In addition, the irradiated region was sputtered as deep as 5.4 nm. From the experiment of isolated Cluster ion impact oil the Si surfaces, it was observed that the induced hillocks nm high had the surfaces embossed at the lower ion dosages, The surface roughness was slightly increased with the hillock density and the ion dosage, At higher than a critical ion dosage, the induced hillocks were sputtered and the sputtered particles migrated from the side of the hillock to the valleys among the hillocks in order to fill. After prolonged irradiation of cluster ion, it was observed that the irradiated region was very flat and etched. A simple phenomenological model in terms of dosage-dependent aequential surface embossment. sputtering, smoothing and etching processes was suggested to explain these cluster-ion impact interactions with the Si surfaces at various dosages. (C) 2002 Elsevier Science B.V. All rights reserved. English ELSEVIER SCIENCE BV BEAMS BOMBARDMENT FILMS Dependence of surface smoothing, sputtering and etching phenomena on cluster ion dosage Article 10.1016/S0168-583X(02)01295-8 1 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, v.196, no.3-4, pp.268 - 274 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 196 3-4 268 274 scie scopus 000179300300008 2-s2.0-0036850443 Instruments & Instrumentation Nuclear Science & Technology Physics, Atomic, Molecular & Chemical Physics, Nuclear Instruments & Instrumentation Nuclear Science & Technology Physics Article BEAMS BOMBARDMENT FILMS cluster ion impact surface smoothing sputtering surface embossment hillocks surface migration