Nandi, SK Choi, WK Noh, YS Oh, MS Maikap, S Hwang, NM Kim, DY Chatterjee, S Samanta, SK Maiti, CK 2024-01-21T09:45:41Z 2024-01-21T09:45:41Z 2021-09-01 2002-10-24 0013-5194 https://pubs.kist.re.kr/handle/201004/139121 The electrical and interfacial properties of Ta2O5/ZnO/p-Si metal-insulator-semiconductor structures are investigated using high frequency capacitance-voltage and conductance-voltage characteristics. Charge trapping behaviour under Fowler-Nordheim constant current stressing is also reported. An interface state density (1.22 x 10(12) cm(-2) eV(-1)) has been observed for the Ta2O5/ZnO interface. English IEE-INST ELEC ENG ZNO THIN-FILMS SI GROWTH Investigations on Ta2O5/ZnO insulator-semiconductor interfaces Article 10.1049/el:20020944 1 ELECTRONICS LETTERS, v.38, no.22, pp.1390 - 1392 ELECTRONICS LETTERS 38 22 1390 1392 scie scopus 000179220900062 2-s2.0-0037168211 Engineering, Electrical & Electronic Engineering Article ZNO THIN-FILMS SI GROWTH ZnO Ta2O5/ZnO MIS structure C-V