Huh, KS Ham, MH Myoung, JM Lee, JM Lee, KI Chang, JY Han, SH Kim, HJ Lee, WY 2024-01-21T10:01:36Z 2024-01-21T10:01:36Z 2021-09-01 2002-10-01 0021-4922 https://pubs.kist.re.kr/handle/201004/139139 We present the electron-induced ferromagnetic ordering and magnetotransport of epitaxial (Ga1-xMnx)N films with low Mn concentration (x = 0.0006-0.005) grown by plasma-enhanced molecular beam epitaxy (PEMBE). The (Ga,Mn)N films were found to exhibit n-type conductivity, ferromagnetic ordering with Curie temperature in the range 550-700K, in-plane magnetic anisotropy, and negative magnetoresistance (MR) in the range of 4-300 K. Our results are indicative of ferromagnetic semiconducting (Ga,Mn)N films due to the coupling of electron spins and localized Mn moments. English INST PURE APPLIED PHYSICS MOLECULAR-BEAM-EPITAXY HETEROSTRUCTURES Room temperature electron-mediated ferromagnetism in a diluted magnetic semiconductor: (Ga,Mn)N Article 10.1143/JJAP.41.L1069 1 JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, v.41, no.10A, pp.L1069 - L1071 JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS 41 10A L1069 L1071 scie scopus 000179893800015 2-s2.0-0036815486 Physics, Applied Physics Article MOLECULAR-BEAM-EPITAXY HETEROSTRUCTURES (Ga,Mn)N PEMBE diluted magnetic semiconductor wide bandgap ferromagnetic semiconductor carrier-mediated ferromagnetism