Kim, JH Jhon, YM Byun, YT Lee, S Woo, DH Kim, SH 2024-01-21T10:04:17Z 2024-01-21T10:04:17Z 2021-09-01 2002-10 1041-1135 https://pubs.kist.re.kr/handle/201004/139187 The novel design of an all-optical XOR gate by using cross-gain modulation of semiconductor optical amplifiers has been suggested and demonstrated successfully at 10 Gb/s. Boolean AB and AB of the two input signals A and B have been obtained and combined to achieve the all-optical XOR gate. No additional input beam such as a clock signal or continuous wave light is used in this new design, which is required in other all-optical XOR gates. English IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC All-optical XOR gate using semiconductor optical amplifiers without additional input beam Article 10.1109/LPT.2002.801841 1 IEEE PHOTONICS TECHNOLOGY LETTERS, v.14, no.10, pp.1436 - 1438 IEEE PHOTONICS TECHNOLOGY LETTERS 14 10 1436 1438 scie scopus 000178492700018 2-s2.0-0036772892 Engineering, Electrical & Electronic Optics Physics, Applied Engineering Optics Physics Article all-optical XOR gate cross-gain modulation semiconductor optical amplifier