Yoo, DC Lee, JY Kim, IS Kim, YT 2024-01-21T10:05:54Z 2024-01-21T10:05:54Z 2021-09-01 2002-09-02 0040-6090 https://pubs.kist.re.kr/handle/201004/139215 The microstructure of the sputtered-YMnO3, thin films on Si (100) substrates was controlled by only using thermal treatment processes and YMnO3 thin films having a well-defined bi-layered microstructure were fabricated. These YMnO3 thin films have two distinct layers, i.e. approximately 40 nm-thick top layer of {00l}-oriented YMnO3, and approximately 60 nm-thick bottom layer of polycrystalline YMnO3 in the 100 rim-thick film. The abrupt change of the crystalline orientation from the {00l}-preferred orientation to the random orientation is mainly due to a high stress induced by die {00l}-oriented YMnO3 layer, which was confirmed by a full width at half-maximum in Si (004) rocking curves. The controlled c-axis/polycrystalline YMnO3 thin films showed a better memory window and low leakage current density than purely c-axis-oriented YMnO3 thin film and the purely polycrystalline YMnO3 thin film. (C) 2002 Elsevier Science B.V. All rights reserved. English ELSEVIER SCIENCE SA NONVOLATILE MEMORY DEVICES FERROELECTRIC PROPERTIES DEPOSITION CANDIDATE GROWTH Microstructure control of YMnO3 thin films on Si (100) substrates Article 10.1016/S0040-6090(02)00703-4 1 THIN SOLID FILMS, v.416, no.1-2, pp.62 - 65 THIN SOLID FILMS 416 1-2 62 65 scie scopus 000178582700010 2-s2.0-0037009692 Materials Science, Multidisciplinary Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter Materials Science Physics Article NONVOLATILE MEMORY DEVICES FERROELECTRIC PROPERTIES DEPOSITION CANDIDATE GROWTH transmission electron microscopy (TEM) yttrium compound crystallization