Park, MC Huh, KS Myoung, JM Lee, JM Chang, JY Lee, KI Han, SH Lee, WY 2024-01-21T10:08:10Z 2024-01-21T10:08:10Z 2021-09-05 2002-09 0038-1098 https://pubs.kist.re.kr/handle/201004/139256 We report on the crystal structures, magnetic and magnetotransport properties of epitaxial (Ga1-xMnx)N films with low Mn concentration (x = 0.06-0.5%) grown by plasma-enhanced molecular beam epitaxy, exhibiting n-type conductivity and ferromagnetism with Curie temperature in the range 550-700 K. Transmission electron microscopy studies revealed that Mn ions substitute for Ga ions in the epitaxial structure, leading to the expansion of the lattice parameter a of the hexagonal (wurtzite) structure. The temperature dependence of the sheet resistance is found to show negative magnetoresistance in the temperature range 4-300 K, indicative of ferromagnetic semiconducting (Ga,Mn)N films. (C) 2002 Elsevier Science Ltd. All rights reserved. English PERGAMON-ELSEVIER SCIENCE LTD MAGNETIC SEMICONDUCTORS Room temperature ferromagnetic (Ga,Mn)N epitaxial films with low Mn concentration grown by plasma-enhanced molecular beam epitaxy Article 10.1016/S0038-1098(02)00471-4 1 SOLID STATE COMMUNICATIONS, v.124, no.1-2, pp.11 - 14 SOLID STATE COMMUNICATIONS 124 1-2 11 14 scie scopus 000178694900003 2-s2.0-0036749557 Physics, Condensed Matter Physics Article MAGNETIC SEMICONDUCTORS (Ga,Mn)N diluted magnetic semiconductor wide bandgap ferromagnetic semiconductor plasma-enhanced molecular beam epitaxy