Koonath, P Kim, S Cho, WJ Gopinath, A 2024-01-21T10:08:39Z 2024-01-21T10:08:39Z 2021-09-01 2002-09 0018-9197 https://pubs.kist.re.kr/handle/201004/139265 Theoretical modeling and fabrication of polarization-insensitive semiconductor optical amplifiers that use a multi-quantum-well structure as the gain media are reported. Polarization insensitivity of gain is achieved through the introduction tensile strain into the quantum wells. Gain calculations, using the k.p method, were performed to obtain the required amount of tensile strain to obtain polarization insensitivity over a wide energy spectrum. Fabricated amplifiers show a polarization-insensitive (<1 dB) spectral width of 10 nm at 1300 nm in the InGaAsP/InP system, 15 nm at 1300 nm in the AlInGaAs/InP system, and 40 nm at 1550 nm in the AlInGaAs/InP system. English IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC WAVELENGTH CONVERTER LASER-AMPLIFIERS GAIN Polarization-insensitive quantum-well semiconductor optical amplifiers Article 10.1109/JQE.2002.802445 1 IEEE JOURNAL OF QUANTUM ELECTRONICS, v.38, no.9, pp.1282 - 1290 IEEE JOURNAL OF QUANTUM ELECTRONICS 38 9 1282 1290 scie scopus 000177641100019 2-s2.0-0036714052 Engineering, Electrical & Electronic Quantum Science & Technology Optics Physics, Applied Engineering Physics Optics Article WAVELENGTH CONVERTER LASER-AMPLIFIERS GAIN integrated optics polarization quantum wells semiconductor optical amplifier tensile strain