Cho, J Han, S Lee, Y Kim, OK Kim, GH Kim, YW Lim, H 2024-01-21T10:10:15Z 2024-01-21T10:10:15Z 2021-09-01 2002-08-01 0257-8972 https://pubs.kist.re.kr/handle/201004/139294 The effect of recoil-implantation and out-diffusion in plasma source ion implantation (PSII) on ultra-shallow p(+)/n junction formation has been studied. Because the wafer is directly exposed to plasma, diborane radicals in the plasma can be adsorbed on the wafer surface. The amount of recoil-implanted boron as an additive dose was measured. In the annealing process, increasing the nitrogen pressure from vacuum to 360 torr, decreased the boron out-diffusion. In addition, increasing the annealing time rendered the boron out- and in-diffusion severe. Considering recoil implantation, the wafers were implanted with a dose of 1.98 x 10(15) atoms/cm(2). The as-implanted wafers were subsequently spike-annealed at 1000 degreesC in nitrogen ambient. With implant energy of 0.5 and 1 keV, ultra-shallow junction depths of 360 and 380 A, respectively, could be acquired. In addition, sheet resistance of 420 and 373 Omega/rectangle were obtained, respectively. This junction depth and sheet resistance prepared by PSII was found to satisfy next-generation memory-device doping technology. (C) 2002 Elsevier Science B.V. All rights reserved. English ELSEVIER SCIENCE SA The effect of plasma exposure and annealing atmosphere on shallow junction formation using plasma source ion implantation Article 10.1016/S0257-8972(02)00140-8 1 SURFACE & COATINGS TECHNOLOGY, v.157, no.1, pp.19 - 25 SURFACE & COATINGS TECHNOLOGY 157 1 19 25 scie scopus 000176940100004 2-s2.0-0036682244 Materials Science, Coatings & Films Physics, Applied Materials Science Physics Article plasma source ion implantation (PSII) recoil implantation out-diffusion ultra-shallow junction