Kim, JH Lee, SH Ahn, JH Lee, JK 2024-01-21T10:10:30Z 2024-01-21T10:10:30Z 2022-01-11 2002-08 1058-4587 https://pubs.kist.re.kr/handle/201004/139298 We fabricated a Bragg reflector type FBAR using AlN piezoelectric with quarter wavelength thickness, where the Bragg reflector was composed Of W-SiO(2) pairs. By numerical simulation considering actual acoustic losses of each layer, we analyzed the frequency response of the resonator and could explain it using an equivalent circuit with parasitic elements. The Effective electromechanical coupling constant (K(eff)(2)) and the Quality factor (Q(s)), figures of merit of the resonator, were about 1.1% and 307, respectively. English TAYLOR & FRANCIS LTD High frequency response of Bragg reflector type film bulk acoustic wave resonator Article 1 INTEGRATED FERROELECTRICS, v.41, no.1-4, pp.1797 - 1806 INTEGRATED FERROELECTRICS 41 1-4 1797 1806 scie scopus 000173067100017 Engineering, Electrical & Electronic Physics, Applied Physics, Condensed Matter Engineering Physics Article; Proceedings Paper Bragg reflector FBAR AlN