Kim, DG Lee, HH Choi, YW Lee, S Woo, DH Byun, YT Kim, JH Kim, SH Futakuchi, N Nakano, Y 2024-01-21T10:14:54Z 2024-01-21T10:14:54Z 2021-09-01 2002-07-01 0021-4922 https://pubs.kist.re.kr/handle/201004/139377 Waveguide-type InGaAs/InP multiple quantum well PnpN depleted optical thyristors operating at 1.55 mum are proposed and fabricated for the first time. In this paper, using the finite difference method (FDM), we calculate the effects of parameters such as doping concentration and the thicknesses of the outer and inner layers of the thyristor to determine the optimized structure in the view of fast and low-power-consuming operation. With these results, the fabricated optical thyristor shows sufficient nonlinear s-shape I-V characteristics with a switching voltage of 4.03 V, a holding voltage of 1.77 V, and spontaneous emission along the waveguide. English JAPAN SOC APPLIED PHYSICS MU-M Design and measurement of waveguide-type PnpN optical thyristors for optical communications Article 10.1143/JJAP.41.L765 1 JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, v.41, no.7A, pp.L765 - L767 JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 41 7A L765 L767 scie scopus 000177527000009 2-s2.0-18744433596 Physics, Applied Physics Article MU-M depleted optical thyristor finite difference method waveguide optical switching spontaneous emission optical communication systems