An, SY Kim, JS Seo, DW Suh, SH 2024-01-21T10:31:58Z 2024-01-21T10:31:58Z 2021-09-01 2002-07 0361-5235 https://pubs.kist.re.kr/handle/201004/139419 Cadmium telluride (CdTe) is being widely used for passivating the HgCdTe p-n diode junction. Instead of CdTe, we tried a compositionally graded HgCdTe as a passivation layer that was formed by annealing an HgCdTe p-n junction in a Cd/Hg atmosphere. During annealing, Cd diffuses into HgCdTe from the Cd vapor, while Hg diffuses out from HgCdTe, forming compositionally graded HgCdTe at the surface. The Cd mole fraction at the surface was constant regardless of the annealing temperature in the range of 250-350degreesC. Capacitance versus voltage (C-V) curves for p-type HgCdTe that were passivated with compositionally graded HgCdTe formed by Cd/Hg annealing at 260degreesC showed a smaller flat-band voltage than the one passivated by thermally deposited CdTe, indicative of the better quality of the passivation. A long-wave infrared (LWIR) HgCdTe p-n junction diode passivated by compositionally graded HgCdTe showed about a one order of magnitude smaller R(d)A value than the one passivated by thermally deposited CdTe, confirming the effectiveness of the compositionally graded HgCdTe as a passivant. English MINERALS METALS MATERIALS SOC GROWTH CDTE/HGCDTE MOVPE Passivation of HgCdTe p-n diode junction by compositionally graded HgCdTe formed by annealing in a Cd/Hg atmosphere Article 10.1007/s11664-002-0219-z 1 JOURNAL OF ELECTRONIC MATERIALS, v.31, no.7, pp.683 - 687 JOURNAL OF ELECTRONIC MATERIALS 31 7 683 687 scie scopus 000176917000007 2-s2.0-0036638177 Engineering, Electrical & Electronic Materials Science, Multidisciplinary Physics, Applied Engineering Materials Science Physics Article; Proceedings Paper GROWTH CDTE/HGCDTE MOVPE HgCdTe passivation Cd/Hg