Park, YM Park, YJ Kim, KM Shin, JC Kim, EK Son, MH Hwang, SW Yoo, KH 2024-01-21T10:36:23Z 2024-01-21T10:36:23Z 2021-09-01 2002-06 0021-4922 https://pubs.kist.re.kr/handle/201004/139496 Capacitance-voltage measurements were carried Out to investigate the effects of the doping profile on characteristics of self-assembled InAs quantum dots. Using this technique, we observed features of zero-dimensional electron confinement indicating the presence of quantum dots. However, the number of confined states differed depending on the doping profile, and this fact was confirmed by photoluminescence measurements. The equation in the depletion approximation led us to calculate the distribution of carriers as a function of depth from the sample surface. and the results are in agreement with the depth of the quantum dot layer. English JAPAN SOC APPLIED PHYSICS SPECTROSCOPY ELECTRON HOLE Effects of doping profile on characteristics of InAs quantum dots Article 10.1143/JJAP.41.4375 1 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, v.41, no.6B, pp.4375 - 4377 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 41 6B 4375 4377 scie scopus 000177169700073 2-s2.0-0036614006 Physics, Applied Physics Article; Proceedings Paper SPECTROSCOPY ELECTRON HOLE C-V measurement quantum dots Si-doping carrier accumulation