Park, SK Park, YJ Kim, EK Park, CJ Cho, HY Lim, YS Lee, JY Lee, C 2024-01-21T10:36:30Z 2024-01-21T10:36:30Z 2021-09-01 2002-06 0021-4922 https://pubs.kist.re.kr/handle/201004/139498 We have observed the red shift of the emission wavelength in InGaAs/GaAs quantum dots by employing a very thin AlGaAs insertion layer (IL). The thin AlGaAs layer of less than 10 nm in thickness,vas inserted immediately after the formation of self-assembled InGaAs quantum dots (QDs) on a GaAs buffer layer. The low, temperature ( 15 K) photoluminescence peak typically appears at around 1.1 mum in the sample without IL whereas it is red-shifted up to 1.25 mum a the 11, thickness increases. It is interpreted that the thin AlGaAs IL releases the local strain around QDs asymmetrically. English JAPAN SOC APPLIED PHYSICS TEMPERATURE OPERATION GAINNAS Role of insertion layer controlling wavelength in InGaAs quantum dots Article 10.1143/JJAP.41.4378 1 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, v.41, no.6B, pp.4378 - 4381 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 41 6B 4378 4381 scie scopus 000177169700074 2-s2.0-0036614044 Physics, Applied Physics Article; Proceedings Paper TEMPERATURE OPERATION GAINNAS AlGaAs insertion layer (IL) red-shift InGaAs/GaAs quantum dots local strain metal organic chemical vapor deposition