Kim, H Park, JW Lee, JW Lee, YH Song, YH Lee, JH Cho, KI Jang, J Oh, MH Ju, BK 2024-01-21T10:37:06Z 2024-01-21T10:37:06Z 2021-09-01 2002-06 1567-1739 https://pubs.kist.re.kr/handle/201004/139509 It is estimated that a porous polysilicon (PPS) diode with a structure of Au/PPS/n-type Si operates as an efficient stable surface emitting cold cathode. 2.0 mum of an non-doped polysilicon layer is formed on an heavily doped n-type silicon wafer and anodized in a solution of HF (50%):ethanol = 1:1 under illumination by a 500 W tungsten lamp from a distance of 20 cm. The electron emission properties of the PPS diode were investigated as a function of anodizing condition such as anodizing current density. The electron emission trajectory was investigated, and it was also demonstrated their good uniformity in the emitting area. (C) 2002 Published by Elsevier Science B.V. English ELSEVIER SCIENCE BV Electron emission characteristics of the porous polycrystalline silicon diode Article 10.1016/S1567-1739(02)00093-7 1 CURRENT APPLIED PHYSICS, v.2, no.3, pp.233 - 235 CURRENT APPLIED PHYSICS 2 3 233 235 scie scopus ART001193504 000179320100009 2-s2.0-0036069996 Materials Science, Multidisciplinary Physics, Applied Materials Science Physics Article; Proceedings Paper vacuum microelectronics field emitter cold electron emitter field emission display