Cho, YS Jhin, J Park, YJ Cho, S Koh, EK Kim, EK Kim, G Byun, D Min, SK 2024-01-21T10:37:26Z 2024-01-21T10:37:26Z 2021-09-01 2002-06 0021-4922 https://pubs.kist.re.kr/handle/201004/139515 In an effort to improve the initial nucleation and crystal quality of the GaN epilayer, N-ion implantation on the sapphire (0001) substrate has been attempted. As a result of implantation with 55 keV nitrogen ions (N+), to a dose ranging from 1 x 10(15) to 1 X 10(17) cm(-2), prior to GaN epilayer growth, the formation of a thin and disordered AlN phase was observed. The presence of the N-ion-implanted surface decreased internal free energies in the growth of the GaN epilayer, and the misfit strain was relieved to allow the formation of the AlN phase on the N-ion-implanted sapphire substrate. Through the estimation of the lattice strain value for GaN epilayers, it was confirmed that the reduction of strain was achieved with the N-ion-implanted surface with the ion dose of 1 X 10(17) cm(-2). The present results show that N-ion implantation of the sapphire (0001) surface can improve the properties of GaN epilayers grown by metalorganic chemical vapor deposition (MOCVD). English INST PURE APPLIED PHYSICS DISLOCATION DENSITY LATERAL EPITAXY BUFFER LAYER FILMS Implantation of N ions on sapphire substrate for improvement of GaN epilayer Article 10.1143/JJAP.41.4267 1 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.41, no.6B, pp.4267 - 4270 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 41 6B 4267 4270 scie scopus 000177169700048 2-s2.0-0036614656 Physics, Applied Physics Article; Proceedings Paper DISLOCATION DENSITY LATERAL EPITAXY BUFFER LAYER FILMS GaN MOCVD N-ion implantation dislocations lattice strain