Lee, KI Lee, JH Lee, WL Shin, KH Sung, YB Ha, JG Rhie, K Lee, BC 2024-01-21T10:38:04Z 2024-01-21T10:38:04Z 2021-09-05 2002-05-15 0021-8979 https://pubs.kist.re.kr/handle/201004/139526 Magnetic tunnel junctions (MTJ) were fabricated with high oxygen-plasma power and the effects of annealing on the temperature dependence of tunneling magnetoresistance (TMR) were investigated experimentally. As grown, TMR increases, peaks around 160 K, and decreases with increasing temperature from 80 K to 300 K. When MTJs are annealed, T-max, the temperature at which maximum TMR is obtained, decreases as annealing temperature increases to the optimal point. In order to explain the temperature dependence of TMR, the difference of conductance between parallel and antiparallel alignments of magnetizations as a function of temperature is also analyzed. The shifts of T-max due to annealing are described phenomenologically with spin-dependent transfer rates of electrons through the barrier. (C) 2002 American Institute of Physics. English AMER INST PHYSICS THERMAL-STABILITY 300-DEGREES-C VOLTAGE Temperature dependence of magnetoresistance for tunnel junctions with high-power plasma-oxidized barriers: Effects of annealing Article 10.1063/1.1452233 1 JOURNAL OF APPLIED PHYSICS, v.91, no.10, pp.7959 - 7961 JOURNAL OF APPLIED PHYSICS 91 10 7959 7961 scie scopus 000175576400045 2-s2.0-0037094720 Physics, Applied Physics Article; Proceedings Paper THERMAL-STABILITY 300-DEGREES-C VOLTAGE tunneling magnetoresistance