Kim, HK Kim, KK Park, SJ Seong, TY Yoon, YS 2024-01-21T10:38:08Z 2024-01-21T10:38:08Z 2021-09-05 2002-05-15 0021-4922 https://pubs.kist.re.kr/handle/201004/139527 We report on a promising metallisation scheme for high-quality ohmic contacts to n-ZnO:Al (n(d) = 3 x 10(18) cm(-3). The as-deposited contact yields a specific contact resistance of 2.1 x 10(-3) Omega.cm(2). However, annealing of the contact at 700degreesC for 1 min results in a resistance of 3.2 x 10(-5) Omega.cm(2). The prolonged annealing treatment causes negligible degradation of electrical and thermal properties. These results indicate that the Ru film would be a suitable scheme for the fabrication of high-performance ZnO-based optical and high-temperature devices. English JAPAN SOC APPLIED PHYSICS FABRICATION EMISSION Thermally stable and low resistance Ru ohmic contacts to n-ZnO Article 10.1143/JJAP.41.L546 1 JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, v.41, no.5B, pp.L546 - L548 JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 41 5B L546 L548 scie scopus 000176514000004 2-s2.0-0037095554 Physics, Applied Physics Article FABRICATION EMISSION ohmic contact ZnO specific contact resistance ruthenium Auger electron spectroscopy atomic force microscopy