Kim, DS Lee, S Kim, JH Woo, DH Kim, SH Han, SK 2024-01-21T10:38:18Z 2024-01-21T10:38:18Z 2021-09-05 2002-05-15 0021-4922 https://pubs.kist.re.kr/handle/201004/139530 A novel tunable laser consisting of a laterally coupled semiconductor optical amplifier and a semiconductor laser is proposed. This structure exhibits a high degree of frequency selectivity, wide tunability with electrically controlled wavelength, and relatively high side-mode suppression achieved by the additional short electrode in the semiconductor laser. The proposed structure is simulated using the coupled mode theory and the modified transfer matrix method (TMM). This Simulation yields a tuning range of up to 48 nm with a side-mode suppression ratio of approximately 35 dB. English JAPAN SOC APPLIED PHYSICS Wavelength tunability of laterally coupled semiconductor optical amplifier and semiconductor laser diode Article 10.1143/JJAP.41.L574 1 JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, v.41, no.5B, pp.L574 - L576 JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 41 5B L574 L576 scie scopus 000176514000013 2-s2.0-0037095549 Physics, Applied Physics Article tunable laser semiconductor optical amplifier lateral coupling coupled mode theory transfer matrix method side-mode suppression