Lee, TY Kim, KB Cheong, BK Lee, TS Park, SJ Lee, KS Kim, WM Kim, SG 2024-01-21T10:38:44Z 2024-01-21T10:38:44Z 2021-09-04 2002-05-06 0003-6951 https://pubs.kist.re.kr/handle/201004/139538 An approach is proposed to develop recording materials for high speed phase change optical data storage. It utilizes a thin film alloy mixture between a stoichiometric GeSbTe alloy and an additive ternary telluride alloy. Selection rules for an additive alloy are suggested. For a test, (Ge1Sb2Te4)(1-x)(Sn1Bi2Te4)(x) thin films are deposited by co-sputtering and their structural and thermal properties are studied. Ge1Sb2Te4 and Sn1Bi2Te4 are found to form a completely soluble pseudo-binary system, whose crystalline lattice parameters obey Vegard&apos;s rule over the entire range of x (0<x<1). Furthermore, the alloy mixtures display an increasing tendency for crystallization with Sn1Bi2Te4 content. Dynamic tests of disk samples are made to show the effectiveness of the approach for high speed erasure. (C) 2002 American Institute of Physics. English AMER INST PHYSICS INTERFACE LAYER DISK LASER Thin film alloy mixtures for high speed phase change optical storage: A study on (Ge1Sb2Te4)(1-x)(Sn1Bi2Te4)(x) Article 10.1063/1.1476705 1 APPLIED PHYSICS LETTERS, v.80, no.18, pp.3313 - 3315 APPLIED PHYSICS LETTERS 80 18 3313 3315 scie scopus 000175298400023 2-s2.0-79956059365 Physics, Applied Physics Article INTERFACE LAYER DISK LASER phase change