Jang, CW Kim, J Kang, SJL 2024-01-21T10:41:14Z 2024-01-21T10:41:14Z 2021-09-04 2002-05 0002-7820 https://pubs.kist.re.kr/handle/201004/139583 We investigated the effects of the sintering atmosphere on the interface structure and grain-growth behavior in 10-vol%-YAG-added Sic. When alpha-SiC was Iiquid-phase-sintered in an Ar atmosphere, the grain/matrix interface was faceted, and abnormal grain growth occurred, regardless of the presence of a-seed grains. In contrast, when the same sample was sintered in N-2, the grain interface was defaceted (rough), and no abnormal grain growth occurred, even with an addition of a-seed grains. X-ray diffraction analysis of this sample showed the formation of a 3C (beta-SiC) phase, together with a 6H (alpha-SiC) phase. These results suggest that the nitrogen dissolved in the liquid matrix made the grain interface rough and induced normal grain growth by an alpha - beta reverse phase transformation. Apparently, the growth behavior of SiC grains in a liquid matrix depends on the structure of the grain interface: abnormal growth for a faceted interface and normal growth for a rough interface. English AMER CERAMIC SOC MECHANICAL-PROPERTIES HIGH-TEMPERATURE CO LIQUID MICROSTRUCTURE TRANSFORMATION DEPENDENCE NITRIDE MATRIX Effect of sintering atmosphere on grain shape and grain growth in liquid-phase-sintered silicon carbide Article 1 JOURNAL OF THE AMERICAN CERAMIC SOCIETY, v.85, no.5, pp.1281 - 1284 JOURNAL OF THE AMERICAN CERAMIC SOCIETY 85 5 1281 1284 scie scopus 000175788400042 2-s2.0-0036572513 Materials Science, Ceramics Materials Science Article MECHANICAL-PROPERTIES HIGH-TEMPERATURE CO LIQUID MICROSTRUCTURE TRANSFORMATION DEPENDENCE NITRIDE MATRIX silicon carbide