Bae, HS Kim, TG Whang, CN Im, S Yun, JS Song, JH 2024-01-21T10:42:41Z 2024-01-21T10:42:41Z 2021-09-04 2002-04-01 0021-8979 https://pubs.kist.re.kr/handle/201004/139608 Luminescent silicon oxides containing radiative centers were obtained by using two different techniques. Silicon rich silicon oxides (SRSOs) were fabricated by rf magnetron sputter deposition and Ge-implanted SiO2 films were fabricated by ion implantation following the thermal oxidation of Si. Blue and violet photoluminescence were observed from the SRSO and the Ge-implanted SiO2, respectively. However, the electroluminescence (EL) spectra from both oxides exhibited red and near-infrared luminescence bands. Strong EL was observed only under reverse bias conditions on metal-luminescent oxide-semiconductor structures. The EL intensity and peak position were varied with applied voltages. According to the EL and current-voltage measurements, it is concluded that the possible EL mechanism is the impact ionization of ground state electrons in the radiative centers. (C) 2002 American Institute of Physics. English AMER INST PHYSICS SILICON-DIOXIDE FILMS VISIBLE ELECTROLUMINESCENCE PHOTOLUMINESCENCE DEFECTS IMPLANTATION EMISSION Electroluminescence mechanism in SiOx layers containing radiative centers Article 10.1063/1.1452768 1 JOURNAL OF APPLIED PHYSICS, v.91, no.7, pp.4078 - 4081 JOURNAL OF APPLIED PHYSICS 91 7 4078 4081 scie scopus 000174663900016 2-s2.0-0036536664 Physics, Applied Physics Article SILICON-DIOXIDE FILMS VISIBLE ELECTROLUMINESCENCE PHOTOLUMINESCENCE DEFECTS IMPLANTATION EMISSION implantation SiOx defects electroluminescence PL carrier transport