Lee, H Park, YJ Kim, EK 2024-01-21T10:45:18Z 2024-01-21T10:45:18Z 2021-09-05 2002-04 0374-4884 https://pubs.kist.re.kr/handle/201004/139656 Using spectroscopic ellipsometry, we measured the pseudo-dielectric function of self-assembled InAs/GaAs quantum dots at the onset of quantum-dot nucleation at room temperature. from 0.8 to 6 eV. The nominal InAs coverage varied from 1 to 2.6 monolayers (ML). In addition to a quantum-dot-related feature. we observed two transitions near 1.34 an 1.38 eV, which arose from the InAs wetting layer. We fitted the dielectric function of the InAs wetting layer in the visible range by performing a multi-layer analysis and found a strong excitonic enhancement of the E-1 peak. English KOREAN PHYSICAL SOC GROWTH SPECTROSCOPY LAYERS Ellipsometric study of quasi-monolayer InAs embedded in GaAs at the threshold of quantum-dot formation Article 10.3938/jkps.40.716 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.40, no.4, pp.716 - 719 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 40 4 716 719 scie scopus kci other ART000881301 000175022300037 2-s2.0-0036011360 Physics, Multidisciplinary Physics Article GROWTH SPECTROSCOPY LAYERS spectroscopic ellipsometry quantum dot wetting laver transitions photoluminescence