Kim, TG Whang, CN Sun, Y Seo, SY Shin, JH Song, JH 2024-01-21T11:02:16Z 2024-01-21T11:02:16Z 2021-09-05 2002-03-01 0021-8979 https://pubs.kist.re.kr/handle/201004/139697 The effect of ion irradiation on the formation of luminescent Si nanocrystals from silicon-rich silicon oxide (SRSO) films deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition (PECVD) whose Si content ranged from 33 to 50 at. % is investigated. As-deposited SRSO films contained a high density of irregular-shaped Si nanocrystals. Irradiating these films with 380 keV Si at room temperature to a dose of 5.7x10(15) cm(-2) prior to anneal at 1000 degreesC is found to increase the luminescence intensity due to Si nanocrystals over the films. Based on the x-ray photoemission spectra and the dependence of the luminescence intensity on the irradiating ion dose, anneal time, and the silicon content of the film, we propose the destruction of pre-existing Si clusters by ion irradiation to be an important factor responsible for the observed enhancement of luminescence, and suggest that preanneal irradiation may be a viable method to control the formation of luminescent Si nanocrystals in PECVD-deposited silicon-rich silicon oxide. (C) 2002 American Institute of Physics. English AMER INST PHYSICS AMORPHOUS-SILICON VISIBLE PHOTOLUMINESCENCE THERMODYNAMIC PROPERTIES FILMS CRYSTALLIZATION IMPLANTATION NANOCLUSTERS TEMPERATURE SIO2-FILMS RESONANCE Controlling the formation of luminescent Si nanocrystals in plasma-enhanced chemical vapor deposited silicon-rich silicon oxide through ion irradiation Article 10.1063/1.1432114 1 JOURNAL OF APPLIED PHYSICS, v.91, no.5, pp.3236 - 3242 JOURNAL OF APPLIED PHYSICS 91 5 3236 3242 scie scopus 000174182400104 2-s2.0-33845412603 Physics, Applied Physics Article AMORPHOUS-SILICON VISIBLE PHOTOLUMINESCENCE THERMODYNAMIC PROPERTIES FILMS CRYSTALLIZATION IMPLANTATION NANOCLUSTERS TEMPERATURE SIO2-FILMS RESONANCE ion irradiation SRSO nano-crystal PL