Cho, YS Koh, EK Park, YJ Koh, D Kim, EK Moon, Y Leem, SJ Kim, G Byun, D 2024-01-21T11:04:59Z 2024-01-21T11:04:59Z 2021-09-05 2002-03 0022-0248 https://pubs.kist.re.kr/handle/201004/139745 We have investigated the effects of N--implanted sapphire (0 0 0 1) substrate on a GaN epilaver grown by metalorganic chemical vapor deposition (MOCVD). As a result of implantation with 55 keV nitrogenions (N+) to a dose ranging from 1 x 10(5) to 1 X 10(17)cm(-2) prior to GaN epilayer growth. the N+-implanted sapphire surface was chemophysically modified and a thin disordered AIN phase was observed. The N--implanted substrate's surface had decreased internal free energies during the growth of the GaN epilayer, and the misfit strain was relieved through the formation of an AIN phase on the N+ -implanted sapphire (0 0 0 1) substrate. Crystallographical and optical properties of GaN epilayer grown on N+-implanted sapphire (0 0 0 1) substrate with the ion dose of 1 X 10(16)cm(-2) were found to be improved. indicating decreased internal stress and generation of dislocations in the GaN epilayer. The present results show that N--implantation pre-treatment of the sapphire (0 0 0 1) substrate surface can be used to improve the properties of GaN epilayers grown by MOCVD. (C) 2002 Elsevier Science B.V. All rights reserved. English ELSEVIER SCIENCE BV DISLOCATION DENSITY LATERAL EPITAXY FILMS NITRIDE DEVICES SURFACE LAYERS Effects of N+-implanted sapphire (0001) substrate on GaN epilayer Article 10.1016/S0022-0248(02)00840-0 1 JOURNAL OF CRYSTAL GROWTH, v.236, no.4, pp.538 - 544 JOURNAL OF CRYSTAL GROWTH 236 4 538 544 scie scopus 000175323200006 2-s2.0-0036494438 Crystallography Materials Science, Multidisciplinary Physics, Applied Crystallography Materials Science Physics Article DISLOCATION DENSITY LATERAL EPITAXY FILMS NITRIDE DEVICES SURFACE LAYERS characterization metal-organic chemical vapor deposition nitrides