Yoon, JK Byun, JY Kim, GH Kim, JS Choi, CS 2024-01-21T11:06:14Z 2024-01-21T11:06:14Z 2021-09-05 2002-02-22 0040-6090 https://pubs.kist.re.kr/handle/201004/139768 Growth kinetics of the Mo-silicide layers formed by chemical vapor deposition of Si on a Mo substrate from the SiCl4-H-2 gas mixtures at 1000 degreesC was investigated using the 'Wang' analysis of multilayer diffusional growth, All of the three Mo-silicide phases, tetragonal-MoSi2, Mo5Si3 and Mo3Si in the Mo-Si binary phase diagram were observed by cross-sectional transmission electron microscopy, and obeyed a parabolic rate law indicating diffusion-controlled growth. The intrinsic growth rates of the Mo5Si3 and Mo3Si layers were estimated from their apparent growth rates measured in the Si/Mo diffusion couple. Good agreement was found with the reported values measured from apparent growth rates at the MoSi2/Mo and Mo5Si3/Mo diffusion couples, respectively. (C) 2002 Elsevier Science B.V. All fights reserved. English ELSEVIER SCIENCE SA SILICIDES INTERDIFFUSION KINETICS COATINGS MO5SI3 METAL MOSI2 Multilayer diffusional growth in silicon-molybdenum interactions Article 10.1016/S0040-6090(01)01750-3 1 THIN SOLID FILMS, v.405, no.1-2, pp.170 - 178 THIN SOLID FILMS 405 1-2 170 178 scie scopus 000174418600027 2-s2.0-0037154924 Materials Science, Multidisciplinary Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter Materials Science Physics Article SILICIDES INTERDIFFUSION KINETICS COATINGS MO5SI3 METAL MOSI2 multilayer chemical vapor deposition (CVD) diffusion molybdenum silicides