Lee, JH Chang, IW Byun, SJ Hong, TK Rhie, K Lee, WY Shin, KH Hwang, C Lee, SS Lee, BC 2024-01-21T11:08:46Z 2024-01-21T11:08:46Z 2021-09-05 2002-02 0304-8853 https://pubs.kist.re.kr/handle/201004/139813 An unusually large enhancement of TMR at 77 K was observed in double barrier tunnel junctions (DBTJ). This is explained with extended Julliere's model which yields a twice larger TMR value. When the spin coherence length is much smaller at higher temperature, DBTJ is shown to work as a series of two single barrier tunnel junctions. (C) 2002 Elsevier Science B.V. All rights reserved. English ELSEVIER MAGNETORESISTANCE VOLTAGE TMR of double spin-valve type AF/FM/I/FM/I/FM/AF magnetic tunneling junctions Article 10.1016/S0304-8853(01)00761-2 1 JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, v.240, no.1-3, pp.137 - 139 JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS 240 1-3 137 139 scie scopus 000175813900037 2-s2.0-0036465016 Materials Science, Multidisciplinary Physics, Condensed Matter Materials Science Physics Article; Proceedings Paper MAGNETORESISTANCE VOLTAGE magnetoresistance thin films TMR MTJ double barrier