Jang, SH Kang, T Kim, HJ Kim, KY 2024-01-21T11:09:25Z 2024-01-21T11:09:25Z 2021-09-05 2002-02 0304-8853 https://pubs.kist.re.kr/handle/201004/139825 We investigated magneto resistance (MR) and exchange bias properties by annealing in the dual spin valve (SV) with nano-oxide layer (NOL). By analyzing effects of NOL in top and bottom pinned simple SVs, MR enhancement effect of NOL inserted in the bottom pinned layer was higher than that of NOL in the top pinned layer with annealing. By the enhanced specular scattering of electrons by NOL, the MR ratio of dual SV with NOL was increased to 15.5-15.9% with an annealing of 200-250degreesC. Exchange coupling constant J(ex) was improved rapidly as 0.13-0.16 erg/cm(2) by annealing in the bottom pinned layer, whereas the effect of annealing was not large in the top pinned layer with J(ex) of about 0.09-0.116 erg/cm(2). (C) Elsevier Science B.V. All rights reserved. English ELSEVIER SCIENCE BV MAGNETORESISTANCE ENHANCEMENT The effect of annealing on the MR and exchange bias characteristics in dual spin valve with nano-oxide layer Article 10.1016/S0304-8853(01)00755-7 1 JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, v.240, no.1-3, pp.192 - 195 JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS 240 1-3 192 195 scie scopus 000175813900055 2-s2.0-0036465028 Materials Science, Multidisciplinary Physics, Condensed Matter Materials Science Physics Article; Proceedings Paper MAGNETORESISTANCE ENHANCEMENT spin valve nano-oxide layer exchange biasing specular effect