<?xml version="1.0" encoding="utf-8" standalone="no"?>
<dublin_core schema="dc">
<dcvalue element="contributor" qualifier="author">Lee,&#x20;CS</dcvalue>
<dcvalue element="contributor" qualifier="author">Lee,&#x20;KR</dcvalue>
<dcvalue element="contributor" qualifier="author">Eun,&#x20;KY</dcvalue>
<dcvalue element="contributor" qualifier="author">Yoon,&#x20;KH</dcvalue>
<dcvalue element="contributor" qualifier="author">Han,&#x20;JH</dcvalue>
<dcvalue element="date" qualifier="accessioned">2024-01-21T11:09:32Z</dcvalue>
<dcvalue element="date" qualifier="available">2024-01-21T11:09:32Z</dcvalue>
<dcvalue element="date" qualifier="created">2021-09-05</dcvalue>
<dcvalue element="date" qualifier="issued">2002-02</dcvalue>
<dcvalue element="identifier" qualifier="issn">0925-9635</dcvalue>
<dcvalue element="identifier" qualifier="uri">https:&#x2F;&#x2F;pubs.kist.re.kr&#x2F;handle&#x2F;201004&#x2F;139827</dcvalue>
<dcvalue element="description" qualifier="abstract">The&#x20;mechanical&#x20;properties&#x20;and&#x20;atomic&#x20;bond&#x20;structure&#x20;of&#x20;Si&#x20;incorporated&#x20;into&#x20;tetrahedral&#x20;amorphous&#x20;carbon&#x20;(ta-C)&#x20;films&#x20;were&#x20;investigated.&#x20;The&#x20;films&#x20;were&#x20;deposited&#x20;by&#x20;a&#x20;filtered&#x20;vacuum&#x20;are&#x20;of&#x20;graphite&#x20;with&#x20;simultaneous&#x20;sputtering&#x20;of&#x20;Si.&#x20;The&#x20;Si&#x20;concentration&#x20;in&#x20;the&#x20;film&#x20;could&#x20;be&#x20;controlled&#x20;by&#x20;changing&#x20;the&#x20;flow&#x20;rate&#x20;of&#x20;the&#x20;Ar&#x20;sputtering&#x20;gas,&#x20;It&#x20;was&#x20;observed&#x20;that&#x20;the&#x20;incorporated&#x20;Si&#x20;preferentially&#x20;substituted&#x20;sp(3)&#x20;bonded&#x20;carbon&#x20;when&#x20;the&#x20;Si&#x20;concentration&#x20;was&#x20;less&#x20;than&#x20;2.5&#x20;at.%.&#x20;Since&#x20;the&#x20;Si-C&#x20;bond&#x20;generated&#x20;by&#x20;the&#x20;substitution&#x20;was&#x20;weaker&#x20;than&#x20;C-C&#x20;bond,&#x20;the&#x20;Si&#x20;incorporation&#x20;could&#x20;cause&#x20;the&#x20;relaxation&#x20;of&#x20;nearby&#x20;distorted&#x20;C-C&#x20;bonds&#x20;by&#x20;inducing&#x20;large&#x20;strain&#x20;in&#x20;the&#x20;Si-C&#x20;bond.&#x20;This&#x20;structural&#x20;change&#x20;resulted&#x20;in&#x20;a&#x20;significant&#x20;decrease&#x20;in&#x20;the&#x20;residual&#x20;compressive&#x20;stress&#x20;in&#x20;this&#x20;Si&#x20;concentration&#x20;range.&#x20;In&#x20;contrast,&#x20;the&#x20;incorporated&#x20;Si&#x20;which&#x20;has&#x20;only&#x20;sp3&#x20;hybridization,&#x20;generated&#x20;the&#x20;weaker&#x20;Si-C&#x20;bonds-without&#x20;breaking&#x20;the&#x20;three-dimensional&#x20;interlinks&#x20;of&#x20;the&#x20;atomic&#x20;bond&#x20;structure.&#x20;Hence,&#x20;the&#x20;hardness&#x20;and&#x20;the&#x20;plane&#x20;strain&#x20;modulus&#x20;gradually&#x20;decreased&#x20;with&#x20;Si&#x20;incorporation.&#x20;The&#x20;saturated&#x20;mechanical&#x20;properties&#x20;observed&#x20;when&#x20;the&#x20;Si&#x20;concentration&#x20;was&#x20;higher&#x20;than&#x20;approximately&#x20;10&#x20;at.%&#x20;are&#x20;due&#x20;to&#x20;the&#x20;formation&#x20;of&#x20;a&#x20;large&#x20;amount&#x20;of&#x20;SiC&#x20;phase&#x20;in&#x20;the&#x20;deposited&#x20;film.&#x20;(C)&#x20;2002&#x20;Elsevier&#x20;Science&#x20;B.V.&#x20;All&#x20;rights&#x20;reserved.</dcvalue>
<dcvalue element="language" qualifier="none">English</dcvalue>
<dcvalue element="publisher" qualifier="none">ELSEVIER&#x20;SCIENCE&#x20;SA</dcvalue>
<dcvalue element="subject" qualifier="none">DIAMOND-LIKE&#x20;CARBON</dcvalue>
<dcvalue element="subject" qualifier="none">CHEMICAL-VAPOR-DEPOSITION</dcvalue>
<dcvalue element="subject" qualifier="none">C-H&#x20;FILMS</dcvalue>
<dcvalue element="subject" qualifier="none">MECHANICAL-PROPERTIES</dcvalue>
<dcvalue element="subject" qualifier="none">SILICON</dcvalue>
<dcvalue element="subject" qualifier="none">TEMPERATURE</dcvalue>
<dcvalue element="subject" qualifier="none">STRESS</dcvalue>
<dcvalue element="subject" qualifier="none">NANOINDENTATION</dcvalue>
<dcvalue element="subject" qualifier="none">HARDNESS</dcvalue>
<dcvalue element="subject" qualifier="none">COATINGS</dcvalue>
<dcvalue element="title" qualifier="none">Structure&#x20;and&#x20;properties&#x20;of&#x20;Si&#x20;incorporated&#x20;tetrahedral&#x20;amorphous&#x20;carbon&#x20;films&#x20;prepared&#x20;by&#x20;hybrid&#x20;filtered&#x20;vacuum&#x20;arc&#x20;process</dcvalue>
<dcvalue element="type" qualifier="none">Article</dcvalue>
<dcvalue element="description" qualifier="journalClass">1</dcvalue>
<dcvalue element="identifier" qualifier="bibliographicCitation">DIAMOND&#x20;AND&#x20;RELATED&#x20;MATERIALS,&#x20;v.11,&#x20;no.2,&#x20;pp.198&#x20;-&#x20;203</dcvalue>
<dcvalue element="citation" qualifier="title">DIAMOND&#x20;AND&#x20;RELATED&#x20;MATERIALS</dcvalue>
<dcvalue element="citation" qualifier="volume">11</dcvalue>
<dcvalue element="citation" qualifier="number">2</dcvalue>
<dcvalue element="citation" qualifier="startPage">198</dcvalue>
<dcvalue element="citation" qualifier="endPage">203</dcvalue>
<dcvalue element="description" qualifier="journalRegisteredClass">scie</dcvalue>
<dcvalue element="description" qualifier="journalRegisteredClass">scopus</dcvalue>
<dcvalue element="identifier" qualifier="wosid">000174039500008</dcvalue>
<dcvalue element="identifier" qualifier="scopusid">2-s2.0-0036473461</dcvalue>
<dcvalue element="relation" qualifier="journalWebOfScienceCategory">Materials&#x20;Science,&#x20;Multidisciplinary</dcvalue>
<dcvalue element="relation" qualifier="journalWebOfScienceCategory">Materials&#x20;Science,&#x20;Coatings&#x20;&amp;&#x20;Films</dcvalue>
<dcvalue element="relation" qualifier="journalWebOfScienceCategory">Physics,&#x20;Applied</dcvalue>
<dcvalue element="relation" qualifier="journalWebOfScienceCategory">Physics,&#x20;Condensed&#x20;Matter</dcvalue>
<dcvalue element="relation" qualifier="journalResearchArea">Materials&#x20;Science</dcvalue>
<dcvalue element="relation" qualifier="journalResearchArea">Physics</dcvalue>
<dcvalue element="type" qualifier="docType">Article</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">DIAMOND-LIKE&#x20;CARBON</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">CHEMICAL-VAPOR-DEPOSITION</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">C-H&#x20;FILMS</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">MECHANICAL-PROPERTIES</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">SILICON</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">TEMPERATURE</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">STRESS</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">NANOINDENTATION</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">HARDNESS</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">COATINGS</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">tetrahedral&#x20;amorphous&#x20;carbons</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">Si&#x20;incorporation</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">filtered&#x20;vacuum&#x20;arc</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">reduction&#x20;of&#x20;residual&#x20;stress</dcvalue>
</dublin_core>
