Lee, KI Lee, JH Lee, WY Rhie, KW Ha, JG Kim, CS Shin, KH 2024-01-21T11:09:48Z 2024-01-21T11:09:48Z 2021-09-04 2002-02 0304-8853 https://pubs.kist.re.kr/handle/201004/139832 The effect of rapid thermal anneal (RTA) has been investigated on the properties of an FeMn exchange-biased magnetic tunnel junction (MTJ) using magneto resistance and I-V measurements and transmission electron microscopy (TEM). The tunneling magnetoresistance (TMR) in an as-grown MTJ is found to be similar to27%, while the TMR in MTJs annealed by RTA increases with annealing temperature up to 300degreesC, reaching similar to46%. TEM images reveal that the interface of Al2O3 layer for the annealed MTJ has changed into a relatively clear morphology, as compared to that for the as-grown MTJ. The oxide barrier parameters are found to vary abruptly with annealing time within a few ten seconds. Our results demonstrate that the present RTA enhances the thermal stability of MTJs. (C) 2002 Published by Elsevier Science B.V. English ELSEVIER SCIENCE BV 300-DEGREES-C Enhanced tunneling magnetoresistance and thermal stability of magnetic tunnel junction by rapid thermal anneal Article 10.1016/S0304-8853(01)00580-7 1 JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, v.239, no.1-3, pp.120 - 122 JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS 239 1-3 120 122 scie scopus 000175187300039 2-s2.0-0036465356 Materials Science, Multidisciplinary Physics, Condensed Matter Materials Science Physics Article; Proceedings Paper 300-DEGREES-C magnetic tunnel junction tunneling magnetoresistance thermal stability rapid thermal anneal