신용욱 김상우 2024-01-21T11:12:05Z 2024-01-21T11:12:05Z 2021-09-06 2002-01 1225-0562 https://pubs.kist.re.kr/handle/201004/139871 The electrical properties of porous SiO2/ITO nano thin film were studied by complex impedance and conductive mechani는 were analyzed. According to the results of complex impedance, the activation energ of SiO2/ITO and Zn-SiO2/ITO were 0.309eV, 0.077eV in below 450℃ and 0.147 eV in over 450℃, respectively. In case of SiO2/ITO, slightly direct tunneling occurred at room temperature. The contributio for conduction was very tiny because of high barrier of silica. However, the conductivity abruptly increased in over 300℃ by Thermally assisted tunneling. In case of Zn-SiO2/ITO, high conductivity in 1.26 Ω-1.㎝-1 at room temperature appeared by space charge conduction of Frenkel-poole emission that Zn ions play a role as localized electron states. 한국재료학회 다공성 SiO2/Ito 나노박막의 전기적 특성 Electrical Properties of Porous SiO2/ITO Nano Films Article 2 한국재료학회지, v.12, no.1, pp.94 - 99 한국재료학회지 12 1 94 99 kci ART001199113 SiO2/ITO nano film impedance tunneling Zn ion