Han, JC Song, JI Park, SW Woo, D 2024-01-21T11:12:41Z 2024-01-21T11:12:41Z 2021-09-05 2002-01 0018-9383 https://pubs.kist.re.kr/handle/201004/139882 Growth of ultrahigh carbon-doped p-type InGaAs lattice matched to InP by chemical beam epitaxy (CBE) using carbon tetrabromide (CBr4) as a doping source was investigated. Effects of growth temperature, group V supply pressure, and CBr4 supply pressure on growth rate, composition, mobility, and hole concentration of carbon-doped InGaAs were studied. Ultrahigh net hole concentration and room-temperature mobility of 2 x 10(20)/cm(3) and 33 cm(2)/V.sec, respectively, were achieved. Mobility of the ultrahigh carbon-doped InGaAs, using CBr4 compared favorably to those of CBE grown carbon-doped InGaAs using carbon tetrachloride (CCl4) and molecular beam epitaxy grown beryllium (Be)-doped InGaAs grown at low temperature.. The highly carbon-doped InGaAs layers grown by CBE using CBr4 as a doping source showed a negligible hydrogen passivation effect and were used for the growth of high-performance, highly carbon-doped base InP/InGaAs heterojunction bipolar transistor epitaxial layer structures. English IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC MOLECULAR-BEAM EPITAXY HETEROJUNCTION BIPOLAR-TRANSISTORS CHEMICAL-VAPOR-DEPOSITION P-TYPE GAAS GA0.47IN0.53AS MOMBE BASE INP Growth of ultrahigh carbon-doped InGaAs and its applicationto InP/InGaAs(C) HBTs Article 10.1109/16.974740 1 IEEE TRANSACTIONS ON ELECTRON DEVICES, v.49, no.1, pp.1 - 6 IEEE TRANSACTIONS ON ELECTRON DEVICES 49 1 1 6 scie scopus 000173338000001 2-s2.0-0036247926 Engineering, Electrical & Electronic Physics, Applied Engineering Physics Article MOLECULAR-BEAM EPITAXY HETEROJUNCTION BIPOLAR-TRANSISTORS CHEMICAL-VAPOR-DEPOSITION P-TYPE GAAS GA0.47IN0.53AS MOMBE BASE INP carbon-doping carbon tetrabromide chemical beam epitaxy InGaAs InP/InGaAs(C) HBT