Kim, JS An, SY Suh, SH 2024-01-21T11:13:05Z 2024-01-21T11:13:05Z 2021-09-05 2002-01 0370-1972 https://pubs.kist.re.kr/handle/201004/139889 Short wave infrared (SWIR) photovoltaic devices have been fabricated from metal organic vapour phase epitaxially (MOVPE) grown n on p HgCdTe films on GaAs substrates. The MOVPE grown films were processed into mesa type discrete devices with wet chemical etching employed for meas delineation and CdZnTe surface passivation. The photodiode forward and reverse current-voltage characteristics, as well as the temperature dependence of the zero-bias dynamic resistance, were measured in the temperature range of 100-300 K. The devices are generation-recombination limited up to 250 K. The zero bias dynamic resistance area products at 200 and 300 K were low, 1 x 10(6) and 2.5 x 10(2) Omega cm(2), respectively. The relative spectral response cut off wavelength of device at 300 K was 2.5 mum. English WILEY-V C H VERLAG GMBH HGCDTE MOVPE Characteristics of SWIR diodes of HgCdTe/CdTe/GaAs grown by metal organic vapor phase epitaxy Article 1 PHYSICA STATUS SOLIDI B-BASIC RESEARCH, v.229, no.2, pp.1089 - 1092 PHYSICA STATUS SOLIDI B-BASIC RESEARCH 229 2 1089 1092 scie scopus 000173806700089 2-s2.0-0036002039 Physics, Condensed Matter Physics Article; Proceedings Paper HGCDTE MOVPE SWIR