Yoo, DC Lee, JY Kim, IS Kim, YT 2024-01-21T11:13:18Z 2024-01-21T11:13:18Z 2021-09-05 2002-01 0022-0248 https://pubs.kist.re.kr/handle/201004/139893 YMnO3 thin films have been sputtered on Si(1 0 0) substrates under different ambient conditions. Microstructures of the YMnO3 thin films have been investigated with transmission electron microscopy (TEM) after a rapid thermal annealing process at 850degreesC in N-2 ambient. The YMnO3 film deposited in Ar ambient had random orientations. However. two layers were apparently formed in the YMnO3 film deposited in Ar + O-2 ambient. One was a c-axis oriented YMnO3 layer in the top region and the other was a random oriented YMnO3 layer in the bottom region, which was clearly elucidated by a dark-field TEM image. As the c-axis oriented YMnO3 layer was formed on the poly-YMnO3 layer. stress by thermal expansion difference was relieved and no crack was formed, The memory window was improved due to the partial c-axis oriented YMnO3 layer. (C) 2002 Elsevier Science B.V. All rights reserved. English ELSEVIER SCIENCE BV NONVOLATILE MEMORY DEVICES SI CANDIDATE GROWTH Crystallization behavior of ferroelectric YMnO3 thin films on Si(100) substrates Article 10.1016/S0022-0248(01)01729-8 1 JOURNAL OF CRYSTAL GROWTH, v.234, no.2-3, pp.454 - 458 JOURNAL OF CRYSTAL GROWTH 234 2-3 454 458 scie scopus 000173057500030 2-s2.0-0036131510 Crystallography Materials Science, Multidisciplinary Physics, Applied Crystallography Materials Science Physics Article NONVOLATILE MEMORY DEVICES SI CANDIDATE GROWTH transmission electron microscopy yttrium compounds ferroelectric materials