Bae, SY Shin, KH Lee, JH Rhie, KW Lee, KI Ha, JG Wang, SX 2024-01-21T11:14:22Z 2024-01-21T11:14:22Z 2021-09-04 2001-12-17 0003-6951 https://pubs.kist.re.kr/handle/201004/139911 Atomic migration in metallic multilayers of magnetic tunnel junction (MTJ), and consequent compositional modulation at the interface during plasma oxidation of an Al tunnel barrier is reported. Surprising effects of such modulation in our specific MTJ appear as the systematic increase in exchange bias of the NiFe buffer layer beneath an FeMn antiferromagnet. Cation-current-limited oxidation of the Al metal layer drives atomic migration in the underlying multilayers to compensate for the cation vacancies created in the metal side of the metal/oxide interface. The condition of oxide growth which manifests different migration behavior is also discussed. (C) 2001 American Institute of Physics. English AMER INST PHYSICS JUNCTIONS Oxidation kinetics of tunnel barrier and its effect on exchange bias of proximity interface Article 10.1063/1.1423772 1 APPLIED PHYSICS LETTERS, v.79, no.25, pp.4130 - 4132 APPLIED PHYSICS LETTERS 79 25 4130 4132 scie scopus 000172682300020 2-s2.0-22244485758 Physics, Applied Physics Article JUNCTIONS tunneling magnetoresistance