Lee, SJ Lee, YH Suh, SH Oh, YJ Kim, TY Oh, MH Kim, CJ Ju, BK 2024-01-21T11:14:29Z 2024-01-21T11:14:29Z 2021-09-05 2001-12-15 0924-4247 https://pubs.kist.re.kr/handle/201004/139913 In this study, we fabricated an uncooled thermopile infrared detector with new absorption layer and estimated its output characteristics. Thermocouples of 25 pairs which are composed of boron-doped silicon and aluminum were formed and connected in series, We applied chromium oxide as a new infrared absorption material and it had an absorptivity of more than 0.7 at medium infrared range of about 10.5-13.5 mum. When infrared emitted from black body source of 313 K was irradiated on thermopile infrared detector with chromium oxide absorption layer, electro motive force of 10-15 mV could be generated. (C) 2001 Elsevier Science B.V. All rights, reserved. English ELSEVIER SCIENCE SA CMOS SENSORS Uncooled thermopile infrared detector with chromium oxide absorption layer Article 10.1016/S0924-4247(01)00743-9 1 SENSORS AND ACTUATORS A-PHYSICAL, v.95, no.1, pp.24 - 28 SENSORS AND ACTUATORS A-PHYSICAL 95 1 24 28 scie scopus 000172711100004 2-s2.0-0035892866 Engineering, Electrical & Electronic Instruments & Instrumentation Engineering Instruments & Instrumentation Article CMOS SENSORS thermopile infrared absorption thermal isolation anisotropic wet etching electro motive force