Park, CW Moon, S Chung, HB 2024-01-21T11:34:42Z 2024-01-21T11:34:42Z 2021-09-04 2001-12 0374-4884 https://pubs.kist.re.kr/handle/201004/140012 In this paper, we analyzed multi VOx thin films to use as IR absorbing layer of uncooked IR devices. We used the new structure to fabricate VOx thin film that has improved IR absorbing characteristics. We deposited multi VOx thin films on SiNx by reactive RF magnetron sputtering method with different conditions. We changed the thickness of V and V2O5 thin films and O-2/Ar gas ratio. With this method, we could fabricate multi VOx thin films that have improved IR absorbing characteristics. As the result, of this, we obtained that TCR(Temperature Coefficient of Resistance) value of multi layer VOx thin films was about -2.0 %/K and resistivity was similar to1 Omega cm. English KOREAN PHYSICAL SOC Analysis of multi-layer VOx thin film for uncooled IR detectors Article 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.39, pp.S138 - S140 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 39 S138 S140 scie scopus kci other 000172968700034 2-s2.0-0035542204 Physics, Multidisciplinary Physics Article; Proceedings Paper VOx