Yoo, DC Lee, JY Kim, IS Kim, YT 2024-01-21T11:37:47Z 2024-01-21T11:37:47Z 2021-09-05 2001-11 0022-0248 https://pubs.kist.re.kr/handle/201004/140067 YMnO3 thin films deposited on Si (100) substrate by rf-sputtering were annealed with various conditions. YMnO3 films annealed in a furnace had a c-axis preferred orientation and the films annealed in a rapid thermal processor (RTP) had random orientations. However, cracks were observed in the highly c-axis oriented YMnO3 films. YMnO3 films annealed in the furnace showed poor ferroelectric characteristics. However, YMnO3 films annealed in the RTP showed a ferroelectric C-V hysteresis with 1.5 V memory window at 0.2 V/s sweep rate. Since the thermal expansion of a-axis is five times higher than that of c-axis in the YMnO3 thin films, the c-axis oriented thin films are expected to be easily cracked during the post-annealing process. Moreover, the rapid thermal annealing process effectively suppressed the increase of a native SiO2 thickness in the YMnO3/Si structure. (C) 2001 Published by Elsevier Science B.V. English ELSEVIER SCIENCE BV NONVOLATILE MEMORY DEVICES CANDIDATE GROWTH Effects of post-annealing on the microstructure and ferroelectric properties of YMnO3 thin films on Si Article 10.1016/S0022-0248(01)01563-9 1 JOURNAL OF CRYSTAL GROWTH, v.233, no.1-2, pp.243 - 247 JOURNAL OF CRYSTAL GROWTH 233 1-2 243 247 scie scopus 000170986400033 2-s2.0-0035501981 Crystallography Materials Science, Multidisciplinary Physics, Applied Crystallography Materials Science Physics Article NONVOLATILE MEMORY DEVICES CANDIDATE GROWTH transmission electron microscopy yittrium compounds ferroelectric materials