Kim, TW Lee, DU Jung, M Lee, JH Choo, DC Cho, JW Seo, KY Yoon, YS 2024-01-21T11:40:16Z 2024-01-21T11:40:16Z 2021-09-05 2001-10-05 0169-4332 https://pubs.kist.re.kr/handle/201004/140110 SnO2 thin films on p-InP (1 0 0) substrates were grown at various Ar/O-2 flow-rate ratio by using radio-frequency magnetron sputtering at low temperature. Atomic force microscopy images showed that the SnO2 films grown on the InP (1 0 0) substrates at an Ar/O-2 flow rate of 0.667 and at a temperature of 250 degreesC had the best surface morphologies among the several samples, and X-ray diffraction and transmission electron microscopy (TEM) measurements showed that the SnO2 thin films grown on the InP (1 0 0) substrates were polycrystalline layers with local epitaxy regions. An electron diffraction pattern and TEM measurements showed that the SnO2/p-InP heterostructures had no significant intermixing problems at the heterointerfaces. The capacitance-voltage measurements at room temperature showed that the majority carrier type of the nominally undoped SnO2 film was n-type and that the carrier concentration of the nominally undoped SnO2 film grown at an Ar/O-2 flow rate of 0.667 had a minimum value. Photoluminescence spectra showed that peaks corresponding to the donor-acceptor pair transitions were dominant and that the peak positions changed significantly depending on the Ar/O-2 flow rate. These results indicate that the SnO2 epitaxial films grown on p-InP (1 0 0) substrates at low temperature hold promise for potential electronic devices based on InP substrates, such as superior gas sensors, and high-efficiency solar cells. (C) 2001 Elsevier Science B.V. All rights reserved. English ELSEVIER SCIENCE BV SEMICONDUCTOR GAS SENSORS SPECTROSCOPY DEPOSITION Dependence of the structural, the electrical, and the optical properties on the Ar/O-2 flow-rate ratios for SnO2 thin films grown on p-InP (100) substrates at low temperature Article 10.1016/S0169-4332(01)00437-8 1 APPLIED SURFACE SCIENCE, v.182, no.1-2, pp.69 - 76 APPLIED SURFACE SCIENCE 182 1-2 69 76 scie scopus 000171617100010 2-s2.0-0035813570 Chemistry, Physical Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter Chemistry Materials Science Physics Article SEMICONDUCTOR GAS SENSORS SPECTROSCOPY DEPOSITION SnO2/p-InP transmission electron microscopy photoluminescence