Cho, J Nah, J Oh, MS Song, JH Yoon, KH Jung, HJ Choi, WK 2024-01-21T11:40:29Z 2024-01-21T11:40:29Z 2021-09-04 2001-10-01 0021-4922 https://pubs.kist.re.kr/handle/201004/140114 Ga2O3 (1 wt%)-doped ZnO (GZO) thin films were deposited on alpha -Al2O3(0001) by rf magnetron sputtering at 550 degreesC and a polycrystalline structure was obtained. As-grown GZO thin films show poor electrical properties and photoluminescence (PL). For the improvement of these properties, GZO thin films were annealed at 800-900 degreesC in N-2 atmosphere for 3 min. After rapid thermal annealing, deep-defect-level emission disappears and near-band emission is greatly enhanced. Annealed GZO thin films show very low resistivity of 2.6 x 10(-4) Omega .cm with 3.9 x 10(20)/cm(3) carrier concentration and exceptionally high mobility of 60 cm(2)/V.s. These improved physical properties are explained in terms of the translation of doped-Ga atoms from interstitial to substitutional sites. English INST PURE APPLIED PHYSICS ZINC-OXIDE FILMS DEPOSITION SAPPHIRE EPITAXY PLASMA AL Enhancement of photoluminescence and electrical properties of Ga-doped ZnO thin film grown on alpha-Al2O3(0001) single-crystal substrate by rf magnetron sputtering through rapid thermal annealing Article 10.1143/JJAP.40.L1040 1 JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, v.40, no.10A, pp.L1040 - L1043 JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS 40 10A L1040 L1043 scie scopus 000172306300015 Physics, Applied Physics Article ZINC-OXIDE FILMS DEPOSITION SAPPHIRE EPITAXY PLASMA AL Ga-doped ZnO (GZO) photoluminescence rapid thermal annealing interstitial substitutional