Park, CM Choi, BH Hyon, CK Hwang, SW Ahn, D Kim, EK 2024-01-21T12:08:24Z 2024-01-21T12:08:24Z 2021-09-05 2001-07 0374-4884 https://pubs.kist.re.kr/handle/201004/140351 We present nano mold lithography (NML) which is adequate for high throughput sub-100-nm wafer-level lithography. The details of the house-made press machine and the recipes of the NML are explained. A silicon mold with a minimum feature size of 40 nm has been successfully imprinted on PMMA layers. Reproducible pattern transfer has been routinely achieved with a feature size of 100 nm and a maximum area of 600 mum x 200 mum. Imprinting of metal molds on PMMA layers has also been demonstrated, which opens up the possibility of using metal lift-off patterns as mold patterns. English KOREAN PHYSICAL SOC Nano mold lithography for 40-nm patterns Article 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.39, no.1, pp.157 - 159 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 39 1 157 159 scie scopus kci other 000169870600034 2-s2.0-0042839710 Physics, Multidisciplinary Physics Article nano mold lithography