Kim, JW Kim, SI Kim, YT Kim, S Sung, MY Choi, IH 2024-01-21T12:08:37Z 2024-01-21T12:08:37Z 2021-09-05 2001-07 0021-4922 https://pubs.kist.re.kr/handle/201004/140355 The effects of rapid thermal annealing (RTA) on Co/p-GaN contacts in an O-2/N-2 atmosphere without intermediate metal were investigated. It was observed that the contact resistance (rho (c)) decreased with increasing RTA temperature and that the resistance was reduced by a factor of about 30 after RTA at 600 degreesC in the O-2/N-2 atmosphere. The specific minimum contact resistance was in the 10(-2) Omega .cm(2) range. Comparison of the R-0 and rho (c) values revealed that the rapid thermal annealing in the O-2/N-2 was more effective for reducing the contact resistance than conventional furnace annealing, The reason for the reduction of resistance was expected to be the increase of hole concentration due to the highly reactivated removal of hydrogen atoms in the p-GaN by RTA in the O-2/N-2 atmosphere. English INST PURE APPLIED PHYSICS ALXGA1-XN Effects of rapid thermal annealing on the electrical properties of cobalt contact to p-GaN Article 10.1143/JJAP.40.4450 1 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.40, no.7, pp.4450 - 4453 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 40 7 4450 4453 scie scopus 000170772500004 2-s2.0-0035388271 Physics, Applied Physics Article ALXGA1-XN rapid thermal annealing cobalt p-GaN contact O-2/N-2 atmosphere resistance