Seol, KS Hiramatsu, H Ohki, Y Choi, IH Kim, YT 2024-01-21T12:09:06Z 2024-01-21T12:09:06Z 2021-09-05 2001-07 0884-2914 https://pubs.kist.re.kr/handle/201004/140363 Transition of a SrBi2Ta2O9 precursor film from amorphous to crystalline was induced by excimer laser irradiation. Both fluorite and perovskite crystalline structures in such films were obtained by excimer laser irradiation at substrate temperatures between 200 and 500 degreesC, Either an addition of excess bismuth in the precursor film or an increase in the substrate temperature enhanced the formation of the perovskite structure in the excimer laser-induced annealing process, resulting in the perovskite crystalline phase at a relatively lower temperature of 500 degreesC, Such a low temperature is preferred when SrBi2Ta2O9 is used in ferroelectric devices. The mechanism involved in this laser-induced crystallization is also discussed. English MATERIALS RESEARCH SOCIETY THIN-FILMS AMORPHOUS-SILICON CAPACITORS BISMUTH Low-temperature crystallization induced by excimer laser irradiation of SrBi2Ta2O9 films Article 10.1557/JMR.2001.0257 1 JOURNAL OF MATERIALS RESEARCH, v.16, no.7, pp.1883 - 1886 JOURNAL OF MATERIALS RESEARCH 16 7 1883 1886 scie scopus 000169668200002 2-s2.0-0035410829 Materials Science, Multidisciplinary Materials Science Article THIN-FILMS AMORPHOUS-SILICON CAPACITORS BISMUTH