Kim, TW Lim, SH Gambino, RJ 2024-01-21T12:11:04Z 2024-01-21T12:11:04Z 2021-09-04 2001-06-01 0021-8979 https://pubs.kist.re.kr/handle/201004/140398 The spontaneous Hall effect in amorphous Tb-Fe and Sm-Fe thin films, which possess excellent magnetic softness, is investigated to seek a possibility of practical applications of these thin films. The resistivity of Tb-Fe thin films ranges from 180 to 250 mu Ohm cm as the Tb content varies from 35 to 46 at. %. Tb-Fe thin films show negative Hall resistivity ranging from -7.3 to -5.0 mu Ohm cm in the same composition range, giving the normalized resistivity ratio from -4.1% to -2.0%. On the other hand, the resistivity of Sm-Fe thin films ranges from 150 to 166 mu Ohm cm as the Sm content varies from 22 to 31 at. %. Sm-Fe thin films show positive Hall resistivity which varies from 7.1 to 2.8 mu Ohm cm in the same composition range, giving the normalized resistivity ratio from 4.8% to 1.7%. Between the two different sets of samples, Tb-Fe thin films with perpendicular anisotropy are considered to be more suitable for practical applications, since saturation is reached at a low magnetic field. (C) 2001 American Institute of Physics. English AMER INST PHYSICS MAGNETIC-PROPERTIES MAGNETOSTRICTION Spontaneous Hall effect in amorphous Tb-Fe and Sm-Fe thin films Article 10.1063/1.1357117 1 JOURNAL OF APPLIED PHYSICS, v.89, no.11, pp.7212 - 7214 JOURNAL OF APPLIED PHYSICS 89 11 7212 7214 scie scopus 000169151700203 2-s2.0-0035356481 Physics, Applied Physics Article; Proceedings Paper MAGNETIC-PROPERTIES MAGNETOSTRICTION hall effect